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參數(shù)資料
| 型號： | MMBTA93 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 0K |
| 代理商： | MMBTA93 |
1998. 6. 15
1/2
SEMICONDUCTOR
TECHNICAL DATA
MMBTA92/93
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
FEATURES
Complementary to MMBTA42/43.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25
)
*Pulse Test : Pulse Width
300 S, Duty Cycle
2.0%
* : Package Mounted On 99.5% Alumina 10
8
0.6mm.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base
Voltage
MMBTA92
VCBO
-300
V
MMBTA93
-200
Collector-Emitter
Voltage
MMBTA92
VCEO
-300
V
MMBTA93
-200
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current
IC
-500
mA
Emitter Current
IE
500
mA
Collector Power Dissipation
PC *
350
mW
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55
150
Type Name
Marking
MMBTA92
MMBTA93
Lot No.
YV
Type Name
Lot No.
YW
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base
Breakdown Voltage
MMBTA92
V(BR)CBO
IC=-100 A, IE=0
-300
-
V
MMBTA93
-200
-
Collector-Emitter
Breakdown Voltage
MMBTA92
V(BE)CEO
IC=-1.0mA, IB=0
-300
-
V
MMBTA93
-200
-
DC Current Gain
* hFE
IC=-1.0mA, VCE=-10V
25
-
IC=-10mA, VCE=-10V
40
-
IC=-30mA, VCE=-10V
25
-
Collector-Emitter Saturation Voltage
* VCE(sat)
IC=-20mA, IB=-2.0mA
-
-0.5
V
Base-Emitter Saturation Voltage
* VBE(sat)
IC=-20mA, IB=-2.0mA
-
-0.9
V
Transition Frequency
fT
VCE=-20V, IC=-10mA, f=100MHz
50
-
MHz
Collector Output
Capacitance
MMBTA92
Cob
VCB=-20V, IE=0, f=1MHz
-
6.0
pF
MMBTA93
-
8.0
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參數(shù)描述 |
|---|---|
| MMBTA93LT1 | 功能描述:兩極晶體管 - BJT 500mA 200V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA93LT1G | 功能描述:兩極晶體管 - BJT 500mA 200V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA94 | 制造商:Diotec Semiconductor 功能描述: |
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