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參數(shù)資料
| 型號： | MMBTA56L99Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 119K |
| 代理商： | MMBTA56L99Z |
MPSA56
/
MMBTA56
/
PZTA56
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
80
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
80
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100
A, IC = 0
4.0
V
ICEO
Collector-Cutoff Current
VCE = 60 V, IB = 0
0.1
A
ICBO
Collector-Cutoff Current
VCB = 80 V, IE = 0
0.1
A
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
100
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100 mA, IB = 10 mA
0.25
V
VBE(on)
Base-Emitter On Voltage
IC = 100 mA, VCE = 1.0 V
1.2
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 100 mA, VCE = 1.0 V,
f = 100 MHz
50
MHz
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
Spice Model
PNP (Is=12.27p Xti=3 Eg=1.11 Vaf=100 Bf=91.63 Ne=1.531 Ise=12.27p Ikf=1.009 Xtb=1.5 Br=1.287 Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=48.28p Mjc=.5615 Vjc=.75 Fc=.5 Cje=106.7p Mje=.5168 Vje=.75 Tr=496.3n Tf=865.8p
Itf=.2 Vtf=2 Xtf=.8 Rb=10)
Typical Characteristics
PNP General Purpose Amplifier
(continued)
Typical Pulsed Current Gain
vs Collector Current
P3
0.001
0.01
0.1
50
100
150
200
250
300
I
- COLLECTOR CURRENT (A)
h
-
T
Y
P
IC
A
L
PU
L
SED
C
U
R
EN
T
G
A
IN
FE
- 40 C
C
V
= 1V
CE
125 °C
25 °C
Collector-Emitter Saturation
Voltage vs Collector Current
10
100
0
0.2
0.4
0.6
0.8
I - COLLECTOR CURRENT (mA)
V
-
C
O
L
E
C
T
O
R
EM
IT
T
E
R
VO
L
T
A
G
E
(V
)
C
ESA
T
ββ = 10
- 40 C
125 °C
25 °C
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相關代理商/技術參數(shù) |
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|---|---|
| MMBTA56LT1 | 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA56LT1G | 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA56LT1HTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANSISTOR PNP 80V SOT-23 |
| MMBTA56LT1T | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R |
| MMBTA56LT3 | 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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