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參數(shù)資料
| 型號： | MMBTA56-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MMBTA56-GS18 |
www.vishay.com
2
Document Number 85146
Rev. 1.2, 01-Sep-04
VISHAY
MMBTA56
Vishay Semiconductors
Electrical DC Characteristics
Electrical AC Characteristics
Layout for RthJA test
Thickness: Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
Parameter
Test condition
Part
Symbol
Min
Typ
Max
Unit
DC current gain
VCE = 1 V, - IC = 10 mA
hFE
100
VCE = 1 V, - IC = 100 mA
hFE
100
Collector - emitter breakdown
voltage
- IC = 1 mA, IB = 0 mA
-
V(BR)CEO
80
V
Emitter - base breakdown
voltage
IE = 100 mA, IC = 0
- V(BR)EBO
4.0
V
Collector saturation voltage
- IC = 100 mA, - I<tief<B = 10 mA
- VCEsat
0.25
V
Base - emitter ON voltage
- IC = 100 mA, - IB = 10 mA
- VBE
1.2
V
- IC = 50 mA, - IB = 5 mA
- VBE
1.2
V
Collector - emitter cut - off
current
- VCE = 60 V, - IB = 0
- ICES
100
nA
Collector - base cut - off current - VCB = 80 V, IE = 0
- ICBO
100
nA
Parameter
Test condition
Part
Symbol
Min
Typ
Max
Unit
Gain - bandwidth product
VCE = 1 V, IC = 100 mA, f = 100
MHz
fT
50
MHz
Delay time (see fig.1)
- IB1 = 15 mA, - IC = 150 mA, -
VCC = 30 V, - VEB = 2 V
td
15
ns
Rise time (see fig.1)
- IB1 = 15 mA, - IC = 150 mA, -
VCC = 30 V, - VEB = 2 V
tr
20
ns
Storage time (see fig.2)
- IB1 = - IB2 = 15 mA, - IC = 150
mA, - VCC = 30 V
ts
225
ns
Fall time (see fig.2)
- IB1 = - IB2 = 15 mA, - IC = 150
mA, - VCC = 30 V
tf
30
17451
15 (0.59)
12 (0.47)
0.8 (0.03)
5 (0.2)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1.5 (0.06)
5.1 (0.2)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBTA56LT1 | 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA56LT1G | 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA56LT1HTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANSISTOR PNP 80V SOT-23 |
| MMBTA56LT1T | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R |
| MMBTA56LT3 | 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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