參數(shù)資料
型號： MMBTA56-13
廠商： DIODES INC
元件分類： 小信號晶體管
英文描述： 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 1/3頁
文件大小： 60K
代理商： MMBTA56-13
DS30054 Rev. 6 - 2
1 of 3
MMBTA55 / MMBTA56
www.diodes.com
Diodes Incorporated
MMBTA55 / MMBTA56
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary NPN Types Available
(MMBTA05 / MMBTA06)
Ideal for Medium Power Amplification and
Switching
Also Available in Lead Free Version
Characteristic
Symbol
MMBTA55
MMBTA56
Unit
Collector-Base Voltage
VCBO
-60
-80
V
Collector-Emitter Voltage
VCEO
-60
-80
V
Emitter-Base Voltage
VEBO
-4.0
V
Collector Current - Continuous (Note 1)
IC
-500
mA
Power Dissipation (Note 1)
Pd
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
417
°C/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
E
J
L
TOP VIEW
M
B
C
B
E
H
G
D
K
Mechanical Data
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 4, on Page 2
Terminal Connections: See Diagram
MMBTA55 Marking (See Page 2): K2H
MMBTA56 Marking (See Page 2): K2G
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
MMBTA55
MMBTA56
V(BR)CBO
-60
-80
V
IC = -100
mA, IE = 0
Collector-Emitter Breakdown Voltage
MMBTA55
MMBTA56
V(BR)CEO
-60
-80
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-4.0
V
IE = -100
mA, IC = 0
Collector Cutoff Current
MMBTA55
MMBTA56
ICBO
-100
nA
VCB = -60V, IE = 0
VCB = -80V, IE = 0
Collector Cutoff Current
MMBTA55
MMBTA56
ICEX
-100
nA
VCE = -60V, IBO = 0V
VCE = -80V, IBO = 0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
100
IC = -10mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
-0.25
V
IC = -100mA, IB = -10mA
Base- Emitter Saturation Voltage
VBE(SAT)
-1.2
V
IC = -100mA, VCE = -1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
50
MHz
VCE = -1.0V, IC = -100mA,
f = 100MHz
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
E
B
C
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
Features
SPICE MODELS: MMBTA55 MMBTA56
相關(guān)PDF資料
PDF描述
MMBTA55 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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MMBTA56-HIGH 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBTA56-7 功能描述:兩極晶體管 - BJT 100V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTA56-7-F 功能描述:兩極晶體管 - BJT 100V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTA56-GS08 功能描述:兩極晶體管 - BJT PNP Switching/Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTA56LT1 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTA56LT1G 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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