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參數(shù)資料
| 型號： | MMBTA55 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 125K |
| 代理商： | MMBTA55 |
MMBTA55
THRU
MMBTA56
PNP General
Purpose Amplifier
Features
This device is designed for general purpose amplifier applications at
collector current to 300mA
Marking : MMBTA55=2H/B55, MMBTA56=2GM/B56
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
MMBTA55
MMBTA56
60
80
V
VCBO
Collector-Base Voltage
MMBTA55
MMBTA56
60
80
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Collector Current, Continuous
500
mA
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Thermal Characteristics
Symbol
Rating
Max
Unit
PD
Total Device Dissipation*
Derate above 25
OC
225
1.8
mW
mW/
OC
RJA
Thermal Resistance, Junction to Ambient
556
OC/W
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(1)
(IC=1.0mAdc, IB=0)
MMBTA55
MMBTA56
60
80
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(I E=100ì Adc, IC=0)
4.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=60Vdc, IE=0)
MMBTA55
(VCB=80Vdc, IE=0)
MMBTA56
---
0.1
uAdc
ICES
Emitter Cutoff Current
(VCE=60Vdc, IB=0)
---
0.1
uAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(VCE=1.0Vdc, IC=10mAdc)
(VCE=1.0Vdc, IC=100mA)
100
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc)
---
0.25
Vdc
VBE(on)
Base-Emitter On Voltage
(IC=100mAdc, VCE=1.0Vdc)
---
1.2
Vdc
fT
Current-Gain—Bandwidth Product
(2)
(IC=100mAdc, VCE=1.0Vdc, f=100MHz)
50
---
MHz
* FR-5=1.0 X 0.75 X 0.062 in.
1. Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
2. Alumina=0.4 X 0.3 X 0.024 in. 99.5% alumina.
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
Revision:
4
2006/0
9/20
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
TM
Micro Commercial Components
E
B
C
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
www.mccsemi.com
1 of 4
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| MMBTA55_Q | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA55-7 | 功能描述:兩極晶體管 - BJT 100V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA55-7-F | 功能描述:兩極晶體管 - BJT 100V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA55LT1 | 功能描述:兩極晶體管 - BJT 500mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA55LT1G | 功能描述:兩極晶體管 - BJT 500mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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