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參數(shù)資料
| 型號(hào)： | MMBT9013G-E-AE3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE PACKAGE-3 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 144K |
| 代理商： | MMBT9013G-E-AE3-R |
MMBT9013
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 3
www.unisonic.com.tw
QW-R206-021.C
TYPICAL CHARACTERICS
0
10
0
20
IB=20μA
8
4
Collector - Emitter Voltage, VCE (V)
Collector
Cur
rent,
I C
(m
A)
18
16
14
12
10
6
2
20
30
40
50
IB=40μA
IB=60μA
IB=80μA
IB=100μA
IB=120μA
IB=140μA
Static Characteristic
1
10
1
1000
5
Collector Current, IC (mA)
Dc
Curre
nt
Ga
in,
h
FE
500
300
3
10000
Dc Current Gain
VCE=1V
3000
1000
300
100
50
30
5
3
100
50
30
10
1
10
10000
50
Collector Current, IC (mA)
Sa
tu
ra
tio
nVo
lta
g
e,
V
BE
(SAT)
,V
CE(SA
T
)(mV)
3000
10000
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
IC=10IB
3000
1000
300
100
30
3
1000
500
300
100
30
10
VBE (SAT)
VCE (SAT)
1
10
1000
5
Collector Current, IC (mA)
Cu
rre
n
tGa
in-B
a
nd
wid
th
P
ro
d
u
ct,
f
T(MHz)
300
10000
IC=10IB
3000
1000
300
100
30
3
100
50
30
10
3
VCE=6V
500
1
Current Gain-Bandwidth Product
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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