參數(shù)資料
型號： MMBT6515
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： NPN General Purpose Amplifier
中文描述： 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝： SOT-23, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 103K
代理商： MMBT6515
2003 Fairchild Semiconductor Corporation
Rev. A. February 2003
M
Absolute Maximum Ratings*
T
C
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector current
T
J
, T
stg
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
I
CBO
Collector Cutoff Current
On Characteristics *
h
FE
DC Current Gain
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Thermal Characteristics
T
A
=25
°
C unless otherwise noted
* Device mounted on FR-4 PCB 1.6”
×
0.06"
Parameter
Value
25
40
4.0
200
-55 ~ +150
Units
V
V
V
mA
°
C
- Continuous
Test Condition
Min.
Max.
Units
I
C
= 0.5mA, I
B
= 0
I
C
=10
μ
A, I
E
= 0
I
C
= 10
μ
A, I
C
= 0
V
CE
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0, T = 60
°
C
25
40
4.0
V
V
V
nA
μ
A
50
1.0
I
C
= 2.0mA, V
CE
= 10V
I
C
= 100mA, V
CE
= 10V
I
C
= 50mA, I
B
= 5.0mA
250
150
500
V
CE(sat)
Small Signal Characteristics
C
obo
Collector-Emitter Saturation Voltage
0.5
V
Output Capacitance
V
CB
= 10V, I
E
= 0, f = 100kHz
3.5
pF
Symbol
Parameter
Max.
Units
MPS6515
625
5.0
83.3
200
*MMBT6515
350
2.8
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
357
MPS6515/MMBT6515
NPN General Purpose Amplifier
This device is designed as a general purpose
amplifier and switch.
The useful dynamic range extends to 100mA as a
switch and to 100MHz as an amplifier.
SOT-23
Mark: 3J
1. Base 2. Emitter 3. Collector
1
2
3
TO-92
1
1. Emitter 2. Base 3. Collector
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT6515_Q 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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MMBT6517LT1G-CUT TAPE 制造商:ON 功能描述:MMBT Series 350 V 100 mA SMT NPN Silicon Transistor - SOT-23
MMBT6517LT3 功能描述:兩極晶體管 - BJT 500mA 350V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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