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參數(shù)資料
| 型號： | MMBT589LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
| 中文描述： | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 70K |
| 代理商： | MMBT589LT1G |
Semiconductor Components Industries, LLC, 2007
January, 2007 Rev. 4
1
Publication Order Number:
MMBT589LT1/D
MMBT589LT1
High Current Surface Mount
PNP Silicon Switching
Transistor for Load
Management in
Portable Applications
Features
PbFree Packages are Available
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
30
Vdc
CollectorBase Voltage
V
CBO
50
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
Collector Current Continuous
I
C
1.0
Adc
Collector Current Peak
I
CM
2.0
A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board,
(Note 1) T
= 25
°
C
Derate above 25
°
C
P
D
310
2.5
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
(Note 1)
R
JA
403
°
C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25
°
C
Derate above 25
°
C
P
D
710
5.7
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
(Note 2)
R
JA
176
°
C/W
Total Device Dissipation (Ref. Figure 8)
(Single Pulse < 10 sec.)
P
Dsingle
575
mW
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 X 1.0 inch Pad
http://onsemi.com
SOT23 (TO236)
CASE 318
STYLE 6
Device
Package
Shipping
ORDERING INFORMATION
MMBT589LT1
SOT23
3,000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBT589LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
1
2
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
G3 M
G3 = Device Code
M
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
30 VOLTS, 2.0 AMPS
PNP TRANSISTORS
COLLECTOR
3
1
BASE
2
EMITTER
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| MMBT589LT3 | 功能描述:兩極晶體管 - BJT 2A 30V Switching PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT589LT3G | 功能描述:兩極晶體管 - BJT 2A 30V Switching PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5962 | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5962_Q | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT6427 | 功能描述:達林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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