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參數(shù)資料
| 型號(hào)： | MMBT5401 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 327K |
| 代理商： | MMBT5401 |
MMBT5401
PNP Plastic
Encapsulate
Transistor
SOT-23
Suggested Solder
Pad Layout
Features
Collector Current: ICM=0.6A
Collector-Base Voltage: V(BR)CBO=160V
Operating And Storage Temperatures –55
OC to 150OC
Capable of 0.3Watts of Power Dissipation
Marking: 2L
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector -Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
150
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
160
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=10uAdc, IC=0)
5.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=120Vdc, IE=0)
---
0.1
uAdc
IEBO
Emitter Cutoff Current
(VEB=4.0Vdc, IC=0)
---
0.1
uAdc
ON CHARACTERISTICS
hFE-1
DC Current Gain
(VCE=5.0Vdc, IC=1.0mAdc)
80
---
hFE-2
DC Current Gain
(VCE=5.0Vdc, IC=10mAdc)
100
200
---
hFE-3
DC Current Gain
(VCE=5.0Vdc, IC=50mAdc)
50
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=50mAdc, IB=5.0mAdc)
---
0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=50mAdc,IB=5.0mAdc)
---
1.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=10mAdc, VCE=5.0Vdc, f=30MHz)
100
---
MHz
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
A
B
C
D
E
F
G
H
J
Revision: 3
2006/05/13
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
TM
Micro Commercial Components
E
B
C
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
www.mccsemi.com
1 of 2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT5401 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORPNPSMDSOT-23 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR,PNP,SMD,SOT-23 |
| MMBT5401_D87Z | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5401-7 | 功能描述:兩極晶體管 - BJT SS PNP 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5401-7-F | 功能描述:兩極晶體管 - BJT SS PNP 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5401-G | 功能描述:射頻雙極電源晶體管 VCEO=-150V IC=-600mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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