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參數(shù)資料
| 型號(hào)： | MMBT5086S62Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | MMBT5086S62Z |
2N5086
/
MMBT5086
/
2N5087
/
MMBT5087
Electrical Characteristics
TA= 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
50
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
50
V
ICBO
Collector Cutoff Current
VCB = 10 V, IE = 0
VCB = 35 V, IE = 0
10
50
nA
IEBO
Emitter Cutoff Current
VEB = 3.0 V, IC = 0
50
nA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 100
A, V
CE = 5.0 V
2N5086
2N5087
IC = 1.0 mA, VCE = 5.0 V
2N5086
2N5087
IC = 10 mA, VCE = 5.0 V
2N5086
2N5087
150
250
150
250
150
250
500
800
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
0.3
V
VBE(on)
Base-Emitter On Voltage
IC = 1.0 mA, VCE = 5.0 V
0.85
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 500
A,V
CE = 5.0 V,f = 20 MHz
40
MHz
Ccb
Collector-Base Capacitance
VCB = 5.0 V, IE = 0, f = 100 kHz
4.0
pF
hfe
Small-Signal Current Gain
IC = 1.0 mA, VCE = 5.0,
2N5086
f = 1.0 kHz
2N5087
150
250
600
900
NF
Noise Figure
IC = 100
A, V
CE = 5.0 V,
2N5086
RS = 3.0 k
, f = 1.0 kHz 2N5087
IC = 20
A, V
CE = 5.0 V,
2N5086
RS = 10 k
,
2N5087
f = 10 Hz to 15.7 kHz
3.0
2.0
3.0
2.0
dB
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
Spice Model
PNP (Is=6.734f Xti=3 Eg=1.11 Vaf=45.7 Bf=254.1 Ne=1.741 Ise=6.734f Ikf=.1962 Xtb=1.5 Br=2.683 Nc=2
Isc=0 Ikr=0 Rc=1.67 Cjc=6.2p Mjc=.301 Vjc=.75 Fc=.5 Cje=7.5p Mje=.2861 Vje=.75 Tr=10.1n Tf=467.8p
Itf=.17 Vtf=5 Xtf=8 Rb=10)
PNP General Purpose Amplifier
(continued)
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| MMBT5087 | 功能描述:兩極晶體管 - BJT SOT-23 PNP GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5087_Q | 功能描述:兩極晶體管 - BJT SOT-23 PNP GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5087LT1 | 功能描述:兩極晶體管 - BJT 50mA 50V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5087LT1G | 功能描述:兩極晶體管 - BJT 50mA 50V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5087LT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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