參數(shù)資料
型號： MMBT4401T-13
廠商： DIODES INC
元件分類： 小信號晶體管
英文描述： 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： ULTRA SMALL, PLASTIC PACKAGE-3
文件頁數(shù)： 2/4頁
文件大?。?/td> 0K
代理商： MMBT4401T-13
DS30272 Rev. 5 - 2
2 of 4
MMBT4401T
www.diodes.com
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Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
60
V
IC = 100
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 100
mA, IC = 0
Collector Cutoff Current
ICEX
100
nA
VCE = 35V, VEB(OFF) = 0.4V
Base Cutoff Current
IBL
100
nA
VCE = 35V, VEB(OFF) = 0.4V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
20
40
80
100
40
300
IC = 100A, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.40
0.75
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.75
0.95
1.2
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Ccb
6.5
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Ceb
30
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
15
k
W
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
hre
0.1
8.0
x 10-4
Small Signal Current Gain
hfe
40
500
Output Admittance
hoe
1.0
30
mS
Current Gain-Bandwidth Product
fT
250
MHz
VCE = 10V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
td
15
ns
VCC = 30V, IC = 150mA,
VBE(off) = 2.0V, IB1 = 15mA
Rise Time
tr
20
ns
Storage Time
ts
225
ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Fall Time
tf
30
ns
Notes:
3. Short duration pulse test used to minimize self-heating effect.
4.
For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT4401T-7-F.
Device
Packaging
Shipping
MMBT4401T-7
SOT-523
3000/Tape & Reel
Ordering Information (Note 4)
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
Date Code Key
2X = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
2XYM
Marking Information
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
NP
R
S
T
U
VW
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT4401T-7 功能描述:兩極晶體管 - BJT 40V 150mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4401T-7-F 功能描述:兩極晶體管 - BJT 40V 150mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4401-TP 功能描述:兩極晶體管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT-4401-TR 制造商:Misc 功能描述:
MMBT4401WT1 功能描述:兩極晶體管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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