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參數(shù)資料
| 型號(hào)： | MMBT4401LT1 |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | General Purpose Transistor(NPN Silicon) |
| 中文描述： | 通用晶體管（NPN硅） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 83K |
| 代理商： | MMBT4401LT1 |
MMBT4401
NPN General
Purpose Amplifier
SOT-23
Suggested Solder
Pad Layout
Features
Surface Mount SOT-23 Package
Capable of 350mWatts of Power Dissipation
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
(I
C
=1.0mAdc, I
B
=0)
V
(BR)CBO
Collector-Base Breakdown Voltage
(I
C
=10mAdc, I
E
=0)
V
(BR)EBO
Emitter-Base Breakdown Voltage
(I
E
=0.1mAdc, I
C
=0)
I
BL
Base Cutoff Current
(V
CE
=35Vdc, V
BE
=0.4Vdc)
I
CEX
Collector Cutoff Current
(V
CE
=35Vdc, V
BE
=0.4Vdc)
ON CHARACTERISTICS
h
FE
DC Current Gain*
(I
C
=0.1mAdc, V
CE
=1.0Vdc)
(I
C
=1.0mAdc, V
CE
=1.0Vdc)
(I
C
=10mAdc, V
CE
=1.0Vdc)
(I
C
=150mAdc, V
CE
=1.0Vdc)
(I
C
=500mAdc, V
CE
=1.0Vdc)
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
V
BE(sat)
Base-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
SMALL-SIGNAL CHARACTERISTICS
f
T
Current Gain-Bandwidth Product
(I
C
=20mAdc, V
CE
=10Vdc, f=100MHz)
C
cb
Collector-Base Capacitance
(V
CB
=5.0Vdc, I
E
=0, f=1.0MHz)
C
eb
Emitter-Base Capacitance
(V
BE
=0.5Vdc, I
C
=0, f=1.0MHz)
SWITCHING CHARACTERISTICS
t
d
Delay Time
(V
CC
=30Vdc, V
BE
=0.2Vdc
t
r
Rise Time
I
C
=150mAdc, I
B1
=15mAdc)
t
s
Storage Time
(V
CC
=30Vdc, I
C
=150mAdc
t
f
Fall Time
I
B1
=I
B2
=15mAdc)
*Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Min
Max
Units
40
Vdc
60
Vdc
6.0
Vdc
0.1
μ
Adc
0.1
μ
Adc
20
40
80
100 300
40
0.4
0.75
Vdc
0.75
0.95
1.2
Vdc
250
MHz
6.5
pF
30.0
pF
15
20
225
30
ns
ns
ns
ns
.079
2.000
imm
.031
.800
.035
.900
.037
.950
.037
.950
2 X
C
B
E
Pin Configuration
Top View
K
A
B
C
D
E
F
G
H
J
www.
mc c semi
.c om
omp
onents
21201 Itasca Street Chatsworth
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT4401LT1G | 功能描述:兩極晶體管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT4401LT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MMBT4401LT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| MMBT4401LT1S | 制造商:Motorola Inc 功能描述:Electronic Component |
| MMBT4401LT3 | 功能描述:兩極晶體管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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