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參數(shù)資料
| 型號： | MMBT4401 |
| 廠商： | 智威科技股份有限公司 |
| 英文描述： | SWITCHING TRANSISTOR NPN SILICON |
| 中文描述： | 開關晶體管NPN硅 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 83K |
| 代理商： | MMBT4401 |
MMBT4401
NPN General
Purpose Amplifier
SOT-23
Suggested Solder
Pad Layout
Features
Surface Mount SOT-23 Package
Capable of 350mWatts of Power Dissipation
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
(I
C
=1.0mAdc, I
B
=0)
V
(BR)CBO
Collector-Base Breakdown Voltage
(I
C
=10mAdc, I
E
=0)
V
(BR)EBO
Emitter-Base Breakdown Voltage
(I
E
=0.1mAdc, I
C
=0)
I
BL
Base Cutoff Current
(V
CE
=35Vdc, V
BE
=0.4Vdc)
I
CEX
Collector Cutoff Current
(V
CE
=35Vdc, V
BE
=0.4Vdc)
ON CHARACTERISTICS
h
FE
DC Current Gain*
(I
C
=0.1mAdc, V
CE
=1.0Vdc)
(I
C
=1.0mAdc, V
CE
=1.0Vdc)
(I
C
=10mAdc, V
CE
=1.0Vdc)
(I
C
=150mAdc, V
CE
=1.0Vdc)
(I
C
=500mAdc, V
CE
=1.0Vdc)
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
V
BE(sat)
Base-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
SMALL-SIGNAL CHARACTERISTICS
f
T
Current Gain-Bandwidth Product
(I
C
=20mAdc, V
CE
=10Vdc, f=100MHz)
C
cb
Collector-Base Capacitance
(V
CB
=5.0Vdc, I
E
=0, f=1.0MHz)
C
eb
Emitter-Base Capacitance
(V
BE
=0.5Vdc, I
C
=0, f=1.0MHz)
SWITCHING CHARACTERISTICS
t
d
Delay Time
(V
CC
=30Vdc, V
BE
=0.2Vdc
t
r
Rise Time
I
C
=150mAdc, I
B1
=15mAdc)
t
s
Storage Time
(V
CC
=30Vdc, I
C
=150mAdc
t
f
Fall Time
I
B1
=I
B2
=15mAdc)
*Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Min
Max
Units
40
Vdc
60
Vdc
6.0
Vdc
0.1
μ
Adc
0.1
μ
Adc
20
40
80
100 300
40
0.4
0.75
Vdc
0.75
0.95
1.2
Vdc
250
MHz
6.5
pF
30.0
pF
15
20
225
30
ns
ns
ns
ns
.079
2.000
imm
.031
.800
.035
.900
.037
.950
.037
.950
2 X
C
B
E
Pin Configuration
Top View
K
A
B
C
D
E
F
G
H
J
www.
mc c semi
.c om
omp
onents
21201 Itasca Street Chatsworth
!
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"#
$ %
!
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT4401_D87Z | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT4401_Q | 功能描述:兩極晶體管 - BJT SOT-23 NPN GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT4401-13 | 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR NPN SOT-23 10K - Tape and Reel |
| MMBT4401-13-02-F | 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR NPN SOT-23 3K - Tape and Reel |
| MMBT4401-13-03-F | 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR NPN SOT-23 3K - Tape and Reel |
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