參數(shù)資料
型號： MMBT4401-GS18
廠商： VISHAY SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 2/4頁
文件大?。?/td> 131K
代理商： MMBT4401-GS18
www.vishay.com
2
Document Number 85125
Rev. 1.2, 24-May-04
VISHAY
MMBT4401
Vishay Semiconductors
Electrical DC Characteristics
1) Pulse test: pulse width ≤ 300 s, duty cycle ≤ 2 %
Electrical AC Characteristics
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
DC current gain
VCE = 1 V, IC = 0.1 mA
hFE
20
VCE = 1 V, IC = 1 mA
hFE
40
VCE = 1 V, IC = 10 mA
hFE
80
VCE = 1 V, IC = 150 mA
hFE
100
300
VCE = 2 V, IC = 500 mA
hFE
40
Collector - base breakdown
voltage
IC = 0.1 mA, IE = 0
V(BR)CBO
60
V
Collector - emitter breakdown
voltage 1)
IC = 1 mA, IB = 0
V(BR)CEO
40
V
Emitter - base breakdown
voltage
IE = 0.1 mA, IC = 0
V(BR)EBO
6.0
V
Collector - emitter saturation
voltage
IC = 150 mA, IB = 15 mA
VCEsat
0.40
V
IC = 500 mA, IB = 50 mA
VCEsat
0.75
V
Base - emitter saturation voltage IC = 150 mA, IB = 15 mA
VBEsat
0.75
0.95
V
IC = 500 mA, IB = 50 mA
VBEsat
1.20
V
Collector-emitter cut-off current
VEB = 0.4 V, VCE = 35 V
ICEX
100
nA
Base cut - off current
VEB = 0.4 V, VCE = 35 V
IBL
100
nA
Input impedance
VCE = 10 V, IC = 1 mA, f = 1 kHz
hie
115
k
Voltage feedback ratio
VCE = 10 V, IC = 1 mA, f = 1 kHz
hre
0.1 x 10-4
8 x 10-4
Output admittance
VCE = 10 V, IC = 1 mA, f = 1 kHz
hoe
1.0
30
S
Small signal current gain
VCE = 10 V, IC = 1 mA, f = 1 kHz
hfe
40
500
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
Current gain - bandwidth
product
VCE = 10 V, IC = 20 mA,
f = 100 MHz
fT
250
MHz
Collector - base capacitance
VCB = 5 V, f = 1 MHz, IE = 0
CCBO
6.5
pF
Emitter - base capacitance
VCB = 0.5 V, f = 1 MHz, IC = 0
CEBO
30
pF
Delay time (see fig.1)
IB1 = 15 mA, IC = 150 mA,
VCC = 30 V, VBE = 40 V
td
15
ns
Rise time (see fig.1)
IB1 = 15 mA, IC = 150 mA,
VCC = 30 V, VBE = 40 V
tr
20
ns
Storage time (see fig.2)
IB1 = IB2 = 15 mA, IC = 150 mA,
VCC = 30 V
ts
225
ns
Fall time (see fig.2)
IB1 = IB2 = 1 mA, IC = 150 mA,
VCC = 30 V
ts
30
ns
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