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參數(shù)資料
| 型號(hào)： | MMBT4401-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 131K |
| 代理商： | MMBT4401-GS18 |
VISHAY
MMBT4401
Document Number 85125
Rev. 1.2, 24-May-04
Vishay Semiconductors
www.vishay.com
1
3
2
E
B
C
3
1
2
18822
Small Signal Transistor (NPN)
Features
NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the PNP transistor
MMBT4403 is recommended.
This transistor is also available in the TO-92 case
with the type designation 2N4401.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) FR-5 Board = 1.0 x 0.75 x 0.062 in.
2) Alumina Substrate = 0.4 x 0.3 x 0.024 in. 99.5 % alumina
Maximum Thermal Resistance
Part
Type differentiation
Ordering code
Marking
Remarks
MMBT4401
hFE, 100 to 300 @ 150 mA
MMBT4401-GS18 or MMBT4401-GS08
2X
Tape and Reel
Parameter
Test condition
Symbol
Value
Unit
Collector - base voltage
VCBO
60
V
Collector - emitter voltage
VCEO
40
V
Emitter - base voltage
VEBO
6V
Collector current (continuous)
IC
200
mA
Power dissipation
FR-5 board 1), TA = 25 °C
Ptot
225
mW
Derate above 25 °C
Ptot
1.8
mW/°C
Alumina substrate 2), TA = 25 °C
Ptot
300
mW
Derate above 25 °C
Ptot
2.4
mW/°C
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
FR-5 board
RthJA
556
°C/W
Alumina substrate
RthJA
417
°C/W
Junction temperature
Tj
150
°C
Storage temperature range
TS
- 55 to + 150
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT4401K | 功能描述:兩極晶體管 - BJT NPN EPITAXIAL SILICON RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT4401LT | 制造商:Motorola 功能描述:4401 MOT N12J6G |
| MMBT4401LT1 | 功能描述:兩極晶體管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT4401LT1G | 功能描述:兩極晶體管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT4401LT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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