參數(shù)資料
型號(hào)： MMBT4401/E8
廠商： VISHAY SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 30K
代理商： MMBT4401/E8
MMBT4401
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88226
2
10-May-02
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VCE = 1 V, IC = 0.1 mA
20
——
VCE = 1 V, IC = 1 mA
40
——
DC Current Gain
hFE
VCE = 1 V, IC = 10 mA
80
———
VCE = 1 V, IC = 150 mA
100
—
300
VCE = 2 V, IC = 500 mA
40
——
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 0.1 mA, IE = 0
60
——
V
Collector-Emitter Breakdown Voltage(1)
V(BR)CEO
IC = 1 mA, IB = 0
40
——
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 0.1 mA, IC = 0
6.0
——
V
Collector-Emitter Saturation Voltage
VCEsat
IC = 150 mA, IB = 15 mA
——
0.40
V
IC = 500 mA, IB = 50 mA
——
0.75
Base-Emitter Saturation Voltage
VBEsat
IC = 150 mA, IB = 15 mA
0.75
—
0.95
V
IC = 500 mA, IB = 50 mA
——
1.20
Collector Cut-off Current
ICEV
VEB = 0.4 V, VCE = 35 V
——
100
nA
Base Cut-off Current
IBEV
VEB = 0.4 V, VCE = 35 V
——
100
nA
Input Impedance
hie
VCE = 10 V, IC = 1 mA,
1
—
15
k
f = 1 kHz
Voltage Feedback Ratio
hre
VCE = 10 V, IC = 1 mA,
0.1 10-4
—
8 10-4
—
f = 1 kHz
Output Admittance
hoe
VCE = 10 V, IC = 1 mA,
1.0
—
30
S
f = 1 kHz
Small Signal Current Gain
hfe
VCE = 10 V, IC = 1 mA,
40
—
500
—
f = 1 kHz
Current Gain-Bandwidth Product
fT
VCE = 10 V, IC = 20 mA
250
——
MHz
f = 100 MHz
Collector-Base Capacitance
CCBO
VCB = 5 V, f = 1 MHz, IE = 0
——
6.5
pF
Emitter-Base Capacitance
CEBO
VCB = 0.5 V, f = 1 MHz, IC = 0
——
30
pF
Delay Time (see Fig. 1)
td
IB1 = 15 mA, IC = 150 mA
——
15
ns
VCC = 30 V VBE = 40 V
Rise Time (see Fig. 1)
tr
IB1 = 15 mA, IC = 150 mA
——
20
ns
VCC = 30 V VBE = 40 V
Storage Time (see Fig. 2)
ts
IB1=IB2 =15 mA, IC = 150 mA
——
225
ns
VCC = 30 V
Fall Time (see Fig. 2)
tf
IB1 = IB2 = 1 mA, IC = 150 mA
——
30
ns
VCC = 30 V
Note: (1) Pulse test: pulse width
≤ 300 s, cycle ≤ 2.0%
200
+30V
-4 V
< 2 ns
0
C * < 10 pF
S
C
< 10 pF
S
*
200
1.0 to 100
s, DUTY CYCLE ≈ 2%
1.0 to 100
s, DUTY CYCLE ≈ 2%
+30V
+16 V
-2 V
1k
1k
Scope rise time < 4ns
*Total shunt capacitance of test jig,
connectors and oscilloscope
< 20 ns
0
+16 V
-14 V
Switching Time Equivalent Test Circuit
Figure 1 - Turn-On Time
Figure 2 - Turn-Off Time
相關(guān)PDF資料
PDF描述
MMBT4401 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT4401/E9 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT4401-GS08 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT4401-GS18 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT4401L-AL3-R 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT4401FSTRND 制造商: 功能描述: 制造商:undefined 功能描述:
MMBT4401-G 功能描述:射頻雙極電源晶體管 VCEO=40V IC=600mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray
MMBT4401-GS08 功能描述:兩極晶體管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4401K 功能描述:兩極晶體管 - BJT NPN EPITAXIAL SILICON RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4401LT 制造商:Motorola 功能描述:4401 MOT N12J6G
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*