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參數(shù)資料
| 型號(hào)： | MMBT4126S62Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | MMBT4126S62Z |
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 1.0 mA, IB = 0
25
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, I
E = 0
25
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IC = 10
A, IC = 0
4.0
V
ICBO
Collector Cutoff Current
VCB = 20 V, IE = 0
50
nA
IEBO
Emitter Cutoff Current
VEB = 3.0 V, IC = 0
50
nA
hFE
DC Current Gain
IC = 2.0 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
120
60
360
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 50 mA, IB = 5.0 mA
0.4
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 50 mA, IB = 5.0 mA
0.95
V
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
250
MHz
Cibo
Input Capacitance
VEB = 0.5 V, IC = 0,
f = 1.0 MHz
10
pF
Ccb
Collector-Base Capcitance
VCB = 5.0 V, IE = 0,
f = 100 kHz
4.5
pF
hfe
Small-Signal Current Gain
IC = 2.0 mA, VCE = 10 V,
f = 1.0 kHz
120
480
NF
Noise Figure
IC = 100
A, V
CE = 5.0 V,
RS=1.0 k
, f=10 Hz to 15.7 kHz
4.0
dB
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
PNP General Purpose Amplifier
(continued)
2N4126
/
MMBT4126
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