參數(shù)資料
型號： MMBT4124LT1
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： General Purpose Transistor NPN Silicon(硅NPN通用晶體管)
中文描述： 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝： CASE 318-08, TO-236, 3 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 79K
代理商： MMBT4124LT1
MMBT4124LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 3)
(I
C
= 1.0 mAdc, I
E
= 0)
V
(BR)CEO
25
Vdc
CollectorBase Breakdown Voltage
(I
C
= 10 Adc, I
E
= 0)
V
(BR)CBO
30
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
5.0
Vdc
Collector Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0)
I
CBO
50
nAdc
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
I
EBO
50
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= 2.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
h
FE
120
60
360
CollectorEmitter Saturation Voltage (Note 3)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
0.3
Vdc
BaseEmitter Saturation Voltage (Note 3)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
BE(sat)
0.95
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
300
MHz
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
8.0
pF
CollectorBase Capacitance
(I
E
= 0, V
CB
= 5.0 V, f = 1.0 MHz)
C
cb
4.0
pF
SmallSignal Current Gain
(I
C
= 2.0 mAdc, V
CE
= 10 Vdc, R
S
= 10 k , f = 1.0 kHz)
h
fe
120
480
Current Gain High Frequency
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
(I
C
= 2.0 mAdc, V
CE
= 10 V, f = 1.0 kHz)
|h
fe
|
3.0
120
480
Noise Figure
(I
C
= 100 Adc, V
CE
= 5.0 Vdc, R
S
= 1.0 k
, f = 1.0 kHz)
NF
5.0
dB
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
Figure 1. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 2. Switching Times
I
C
, COLLECTOR CURRENT (mA)
200
1.0
T
100
50
30
20
70
10.0
5.0
7.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
C
1.0
2.0 3.0
5.0 7.0 10
20 30 40
0.2 0.3
0.5 0.7
C
ibo
C
obo
t
s
t
d
t
r
t
f
V
CC
= 3 V
I
C
/I
B
= 10
V
EB(off)
= 0.5 V
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參數(shù)描述
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MMBT4126_Q 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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