參數(shù)資料
型號: MMBT3904T-13
廠商: DIODES INC
元件分類: 小信號晶體管
英文描述: 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: ULTRA SMALL, PLASTIC PACKAGE-3
文件頁數(shù): 2/3頁
文件大小: 72K
代理商: MMBT3904T-13
DS30270 Rev. 5 - 2
2 of 3
MMBT3904T
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
60
V
IC = 10
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICEX
50
nA
VCE = 30V, VEB(OFF) = 3.0V
Base Cutoff Current
IBL
50
nA
VCE = 30V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
40
70
100
60
30
300
IC = 100A, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.20
0.30
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base- Emitter Saturation Voltage
VBE(SAT)
0.65
0.85
0.95
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
4.0
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
8.0
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
10
k
W
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
hre
0.5
8.0
x 10-4
Small Signal Current Gain
hfe
100
400
Output Admittance
hoe
1.0
40
mS
Current Gain-Bandwidth Product
fT
300
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Noise Figure
NF
5.0
dB
VCE = 5.0Vdc, IC = 100
mAdc,
RS = 1.0K
W, f = 1.0MHz
SWITCHING CHARACTERISTICS
Delay Time
td
35
ns
VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA
Rise Time
tr
35
ns
Storage Time
ts
200
ns
VCC = 3.0V, IC = 10mA
Fall Time
tf
50
ns
IB1 = IB2 = 1.0mA
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
Date Code Key
1N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
1NYM
Marking Information
Notes:
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT3904T-7-F.
Device
Packaging
Shipping
MMBT3904T-7
SOT-523
3000/Tape & Reel
Ordering Information (Note 4)
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
NP
R
S
T
UV
W
相關(guān)PDF資料
PDF描述
MMBT3904T/R7 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT3904T/R13 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT3904 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT3904T/R 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT3904T/R_NL 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT3904T-7 功能描述:兩極晶體管 - BJT 40V 150mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT3904T-7-F 功能描述:兩極晶體管 - BJT 40V 150mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT3904-TP 功能描述:兩極晶體管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT3904-TR 制造商:New Jersey Semi. 功能描述:
MMBT3904T-T 功能描述:兩極晶體管 - BJT 600mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2