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參數(shù)資料
| 型號： | MMBT3904M |
| 廠商： | 江蘇長電科技股份有限公司 |
| 英文描述： | TRANSISTOR |
| 中文描述： | 晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 148K |
| 代理商： | MMBT3904M |
C
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
B E
1. BASE
2. EMITTER
3. COLLECTOR
E B
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
MMBT3904M
TRANSISTOR
DESCRIPTION
NPN Epitaxial Silicon Transistor
FEATURES
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT3906M)
Ultra-Small Surface Mount Package
Also Available in Lead Free Version
APPLICATION
General Purpose Amplifier, switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:1N
C
1N
B E
MAXIMUM RATINGS* T
A
=25
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
℃
unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Value
60
40
Units
V
V
Emitter-Base Voltage
6
V
Collector Current -Continuous
0.2
A
Collector Dissipation
0.15
W
℃
℃
Junction Temperature
150
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
I
C
=10μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10μA,I
C
=0
V
CE
=30V,V
EB(off)
=3V
V
EB
=5V,I
C
=0
V
CE
=1V,I
C
=0.1mA
V
CE
=1V,I
C
=1mA
V
CE
=1V,I
C
=10mA
V
CE
=1V,I
C
=50mA
V
CE
=1V,I
C
=100mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
V
CE
=20V,I
C
=10mA,f=100MHz
60
40
6
40
70
100
60
30
0.65
300
V
V
V
μA
μA
V
V
V
V
MHz
0.05
0.1
300
0.2
0.3
0.85
0.95
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBT3904T | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT3904T-7 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT3906E | TRANSISTOR |
| MMBT3906M | TRANSISTOR |
| MMBT3906T | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3904NSC | 制造商:National Semiconductor 功能描述:MMBT3904 |
| MMBT3904Q-7-F | 制造商:Diodes Incorporated 功能描述:MMBT3904 Series NPN 40 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3 |
| MMBT3904RF | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:300mW, NPN Small Signal Transistor |
| MMBT3904RFG | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:300mW, NPN Small Signal Transistor |
| MMBT3904SL | 功能描述:兩極晶體管 - BJT NPN Epitaxial Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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