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參數(shù)資料
| 型號(hào)： | MMBT3906M |
| 廠商： | 江蘇長(zhǎng)電科技股份有限公司 |
| 英文描述： | TRANSISTOR |
| 中文描述： | 晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 209K |
| 代理商： | MMBT3906M |
C
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
B E
1. BASE
2. EMITTER
3. COLLECTOR
E B
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
MMBT3906M
TRANSISTOR
DESCRIPTION
PNP Epitaxial Silicon Transistor
FEATURES
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT3904M)
Ultra-Small Surface Mount Package
Also Available in Lead Free Version
APPLICATION
General Purpose Amplifier,switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:3N
C
3N
B E
MAXIMUM RATINGS* T
A
=25
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current -Continuous
P
D
Power Dissipation
R
JA
Thermal Resistance, Junction to Ambient
T
J
Operating Temperature
T
stg
Storage and Temperature
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V
(BR)CBO
Collector-emitter breakdown voltage
V
(BR)CEO
Emitter-base breakdown voltage
V
(BR)EBO
Collector cut-off current
I
CEX
Emitter cut-off current
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
V
CE(sat)1
Collector-emitter saturation voltage
V
CE(sat)2
V
BE(sat)1
Base-emitter saturation voltage
V
BE(sat)2
Transition frequency
℃
unless otherwise noted
Parameter
Value
-40
-40
-5
-200
150
833
150
-55-150
Units
V
V
V
mA
mW
℃
/W
℃
℃
Test conditions
MIN
TYP
MAX
UNIT
I
C
=-10μA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-10μA,I
C
=0
V
CE
=-30V,V
EB(off)
=-3V
V
EB
=-5V,I
C
=0
V
CE
=-1V,I
C
=-0.1mA
V
CE
=-1V,I
C
=-1mA
V
CE
=-1V,I
C
=-10mA
V
CE
=-1V,I
C
=-50mA
V
CE
=-1V,I
C
=-100mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
V
CE
=-20V,I
C
=-10mA,f=100MHz
-40
V
-40
V
-5
V
-0.05
μA
-0.1
μA
60
80
100
300
60
DC current gain
30
-0.25
V
-0.4
V
-0.65
-0.85
V
-0.95
V
f
T
250
MHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3906Q-7-F | 制造商:Diodes Incorporated 功能描述:BJT,PNP,200MA,40V,MMBT3906,SOT23,AEC-Q - Tape and Reel |
| MMBT3906R-DK | 制造商:Diodes Incorporated 功能描述:200 MA, 40 V, PNP, SI, SMALL SIGNAL TRANSISTOR |
| MMBT3906RF | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:350mW, PNP Small Signal Transistor |
| MMBT3906RFG | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:350mW, PNP Small Signal Transistor |
| MMBT3906SL | 功能描述:兩極晶體管 - BJT 40V 200mA PNP Epitaxial Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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