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| 型號(hào)： | MMBT3904FN3T/R7 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC, DFN-3 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 146K |
| 代理商： | MMBT3904FN3T/R7 |
PAGE . 3
REV.0.2-JUL.18.2009
ELECTRICAL CHARACTERISTICS CURVE
0
50
100
150
200
250
300
0.01
0.1
1
10
100
1000
Collector Current, I C (mA)
hF
E
TJ = 25 C
TJ = 100 C
TJ = 150 C
VCE = 1V
0.000
0.200
0.400
0.600
0.800
1.000
1.200
1.400
0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
V
BE
(
V)
TJ = 25 C
TJ = 100 C
TJ = 150
VCE = 1V
0.1
1.0
0.01
0.1
1
10
100
Collector Current, I C (mA)
V
BE
(s
a
t)
(V
)
TJ = 25 C
TJ = 150 C
IC/IB = 10
TJ = 100 C
0.010
0.100
1.000
0.01
0.1
1
10
100
1000
Collector Current, I C (mA)
V
CE
(sa
t)
(
V
)
TJ = 25 C
TJ = 150 C
IC/IB = 10
1
10
0.1
1
10
100
Reverse Voltage, VR (V)
C
a
pa
ci
ta
n
c
e
(pF
)
COB (CB)
CIB (EB)
TJ = 25 C
Fig. 1. Typical hFE vs Collector Current
Fig. 2. Typical VBE vs Collector Current
Fig. 3. Typical VCE (sat) vs Collector Current
Fig. 4. Typical VBE (sat) vs Collector Current
Fig. 5. Typical Capacitances vs Reverse Voltage
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3904FW | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
| MMBT3904G | 制造商:ZOWIE 制造商全稱:Zowie Technology Corporation 功能描述:General Purpose Transistor |
| MMBT3904-G | 功能描述:射頻雙極電源晶體管 VCEO=40V IC=200mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MMBT3904G-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:GENERAL PURPOSE APPLIATION |
| MMBT3904G-AL3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:GENERAL PURPOSE APPLIATION |
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