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參數(shù)資料
| 型號(hào)： | MMBT3904FN3T/R7 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC, DFN-3 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 146K |
| 代理商： | MMBT3904FN3T/R7 |
PAGE . 2
REV.0.2-JUL.18.2009
MMBT3904FN3
ELECTRICAL CHARACTERISTICS
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
Pa ra meter
S ymbol
Test C ond ition
MIN. TYP. MA X . Uni ts
C ollector - E mi tter B rea kdo wn Voltag e
V (BR)C E O IC =1.0mA , IB =0
40
-
V
C ollector - B ase B reakdown Voltage
V (BR)C B O IC =10uA, IE =0
60
-
V
E mi tte r - B a se B reakd own Vo ltage
V (BR)EBO IE=10uA, IC =0
6 .0
-
V
B ase C utoff C urrent
IBL
V C E=30V, V E B =3.0V
-
50
nA
Collector Cuto ff Curre nt
ICEX
V C E=30V, V E B =3.0V
-
50
nA
D C C urrent Gai n (Note 2)
h
FE
IC =0.1mA , V C E =1 .0V
IC =1.0mA , V C E =1 .0V
IC =10mA , V C E =1.0V
IC =50mA , V C E =1.0V
IC =100 mA, V C E =1.0V
40
70
10 0
60
30
-
300
-
C ollector - E mi tter S a turati on Vo ltage
(Note 2)
V CE(SAT)
IC =10mA , IB =1.0mA
IC =50mA , IB =5.0mA
--
0.2
0.3
V
B ase - E mi tte r S aturati on Volta ge (Note 2)
V BE(SAT)
IC =10mA , IB =1.0mA
IC =50mA , IB =5.0mA
0.65
-
0.85
0.95
V
C ollector - B ase C apa ci tance
C CBO
V C B=5V, IE=0, f =1 MHz
-
4.0
pF
E mi tte r - B a se C ap aci ta nce
C EBO
VEB=0.5 V, IC =0,
f=1MHz
--
8.0
pF
Delay Ti me
td
V C C =3V,V BE =-0.5 V,
IC =10mA ,IB =1 .0mA
--
3 5
ns
Ri se Ti me
tr
V C C =3V,V BE =-0.5 V,
IC =10mA ,IB =1 .0mA
--
3 5
ns
S torage Ti me
ts
V C C =3V,IC =10 mA
IB1=IB 2=1.0mA
--
2 00
ns
Fa ll Ti me
tf
V C C =3V,IC =10 mA
IB1=IB 2=1.0mA
--
5 0
ns
< 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
S to ra g e an d F a ll T im e E q uiv a le nt T est C irc u it
C
S * < 4 p F
27 5
10K
1N 916
+3 V
0
-9 .1 V
10 to 500 us
Du ty Cyc le ~ 2 .0 %
+ 1 0.9V
< 1ns
C
S * < 4 p F
27 5
10K
1N 916
+3 V
0
-9 .1 V
10 to 500 us
Du ty Cyc le ~ 2 .0 %
+ 1 0.9V
< 1ns
27 5
10 K
C
S * < 4pF
0
-0 .5 V
30 0 ns
Du ty Cy c le ~ 2 .0 %
+1 0 .9 V
< 1ns
+3 V
D e la y a nd R is e T im e Equiva le nt Te s t C ir c uit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3904FW | 制造商:SECOS 制造商全稱(chēng):SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
| MMBT3904G | 制造商:ZOWIE 制造商全稱(chēng):Zowie Technology Corporation 功能描述:General Purpose Transistor |
| MMBT3904-G | 功能描述:射頻雙極電源晶體管 VCEO=40V IC=200mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MMBT3904G-AE3-R | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:GENERAL PURPOSE APPLIATION |
| MMBT3904G-AL3-R | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:GENERAL PURPOSE APPLIATION |
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