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參數(shù)資料
| 型號： | MMBT3904 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | GREEN, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 271K |
| 代理商： | MMBT3904 |
MMBT3904
NPN General Purpose Transistor
FEATURES
For switching and amplifier applications.
Complementary PNP Type Available (MMBT3906)
MECHANICAL DATA
Case: SOT-23 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current -Continuous
IC
200
mA
Collector Power Dissipation
PC
200
mW
Thermal Resistance, Junction to Ambient
RΘJA
625
/W
℃
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55~+150
℃
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=10A,IE=0
VCBO
60
V
Collector-emitter breakdown voltage
IC=1mA,IB=0
VCEO
40
V
Emitter-base breakdown voltage
IE=10A,IC=0
VEBO
6
V
Collector-base cut-off current
VCB=60V,IE=0
ICBO
0.1
uA
Collector cut-off current
VCE=30V,VBE(off)=3V
ICEX
50
nA
Emitter-base cut-off current
VEB=5V,IC=0
IEBO
0.1
uA
VCE=1V,IC=1mA
hFE1
100
400
V
VCE=1V,IC=50mA
hFE2
60
V
DC current gain
VCE=1V,IC=100mA
hFE3
30
V
Collector-emitter saturation voltage
IC=50mA,IB=5mA
VCE(sat)
0.3
V
Base-emitter saturation voltage
IC=50mA,IB=5mA
VBE(sat)
0.95
V
Transition frequency
VCE=20V,IC=10mA,
f=100MHz
fT
300
MHz
Delay time
Td
35
nS
Rise time
VCC=3V, VBE=-0.5V
IC=10mA , IB1=-IB2=1mA
Tr
35
nS
Storage time
Ts
200
nS
Fall time
VCC=3V, IC=10mA
IB1=-IB2=15mA
Tf
50
nS
REV. 1, Oct-2010, KSNR11
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