參數(shù)資料
型號: MMBT3904
廠商: VISHAY SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 2/3頁
文件大?。?/td> 57K
代理商: MMBT3904
MMBT3904
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88224
2
10-May-02
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VCE = 1 V, IC = 0.1 mA
40
——
VCE = 1 V, IC = 1 mA
70
——
DC Current Gain
hFE
VCE = 1 V, IC = 10 mA
100
300
VCE = 1 V, IC = 50 mA
60
——
VCE = 1 V, IC = 100 mA
30
——
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 10
A, IE = 0
60
——
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 1 mA, IB = 0
40
——
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 10
A, IC = 0
6.0
——
V
Collector Saturation Voltage
VCEsat
IC = 10 mA, IB = 1 mA
——
0.2
V
IC = 50 mA, IB = 5 mA
——
0.3
Base Saturation Voltage
VBEsat
IC = 10 mA, IB = 1 mA
——
0.85
V
IC = 50 mA, IB = 5 mA
——
0.95
Collector-Emitter Cut-off Current
ICEV
VEB = 3 V, VCE = 30 V
——
50
nA
Emitter-Base Cut-off Current
IEBV
VEB = 3 V, VCE = 30 V
——
50
nA
Gain-Bandwidth Product
fT
VCE = 20 V, IC = 10 mA
300
——
MHz
f = 100 MHz
Collector-Base Capacitance
CCBO
VCB = 5 V, f = 100 kHz
——
4pF
Emitter-Base Capacitance
CEBO
VEB = 0.5 V, f = 100 kHz
——
8pF
0.59 (15)
0.2 (5)
0.03 (0.8)
0.30 (7.5)
0.12 (3)
.04 (1)
0.06 (1.5)
0.20 (5.1)
.08 (2)
.04 (1)
0.47 (12)
Dimensions in inches and
(millimeters)
相關PDF資料
PDF描述
MMBT3904/E8 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT3904/E9 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT3904 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT3904 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT3904 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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