參數(shù)資料
型號: MMBT3904/E9
廠商: GENERAL SEMICONDUCTOR INC
元件分類: 小信號晶體管
英文描述: 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: SOT-23, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 89K
代理商: MMBT3904/E9
9/11/00
MMBT3904
Features
NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the PNP transistor
MMBT3906 is recommended.
This transistor is also available in the TO-92 case
with the type designation 2N3904.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
200
mA
Power Dissipation at TA = 25°C
Ptot
225(1)
mW
300(2)
Thermal Resistance Junction to Substrate Backside
R
ΘSB
320(1)
°C/W
Thermal Resistance Junction to Ambient Air
R
ΘJA
450(1)
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
Note: (1) Device on fiberglass substrate, see layout.
(2) Device on alumina substrate.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 1AM
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
.016 (0.4)
.056
(
1
.43
)
.037(0.95) .037(0.95)
ma
x
..004
(
0.1
)
.122 (3.1)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007
(
0
.17
5
)
.0
45
(
1
.15)
.110 (2.8)
.052
(
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37
(
0
.95)
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
New
Product
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Mounting Pad Layout
相關(guān)PDF資料
PDF描述
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