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參數(shù)資料
| 型號： | MMBT2907S62Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 41K |
| 代理商： | MMBT2907S62Z |
PN2907
/
MMBT2907
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 10 mA, IB = 040V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, I
E = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, IC = 0
5.0
V
ICEX
Collector Cutoff Current
VCE = 30 V
50
nA
IB
Base Cutoff Current
VBE = 0.5 V
50
nA
ICBO
Collector Cutoff Current
VCB = 50 V, IE = 0
VCB = 50 V, IE = 0, TA = 150
°C
20
nA
A
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 10 V, IC = 0.1 mA
VCE = 10 V, IC = 1.0 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 500 mA
35
50
75
100
30
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.4
1.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
1.3
2.6
V
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
VCB = 10 V, f = 1.0 MHz
8.0
pF
Cib
Input Capacitance
VEB = 2.0 V, f = 1.0 MHz
30
pF
hfe
Small-Signal Current Gain
IC = 50 mA, VCE = 20 V,
f = 100 MHz
2.0
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
ton
Turn-on Time
VCC = 30 V, IC = 150 mA,
45
ns
td
Delay Time
IB1 = 15 mA , PW = 200 ns
10
ns
tr
Rise Time
40
ns
toff
Turn-off Time
VCC = 6.0 V, IC = 150 mA
100
ns
ts
Storage Time
IB1 = IB2 = 15 mA
80
ns
tf
Fall Time
30
ns
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| MMBT3416 | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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