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參數(shù)資料
| 型號： | MMBT2907S62Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 41K |
| 代理商： | MMBT2907S62Z |
PN2907
/
MMBT2907
Discrete POWER & Signal
Technologies
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 63. See PN2907A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
800
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
PN2907
*MMBT2907
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
C
B
E
SOT-23
Mark: 2B
MMBT2907
PN2907
C
B
E
TO-92
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
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