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參數(shù)資料
| 型號(hào)： | MMBT2907LT1 |
| 廠商： | RECTRON LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 0K |
| 代理商： | MMBT2907LT1 |
RECTRON
RATING AND CHARACTERISTICS CURVES ( MMBT2907LT1 )
10
f = 1.0 kHz
IC = - 50A
- 100
A
- 500
A
- 1.0mA
RS= OPTIMUM SOURCE RESISTANCE
8.0
6.0
4.0
2.0
0
10
8.0
6.0
4.0
2.0
0
30
2.0
-1.0
VBE(sat) @ IC/IB = 10
fT
,C
U
R
E
N
T±
G
A
IN
B
A
N
D
W
ID
TH
P
R
O
D
U
C
T(
M
H
z)
20
10
7.0
5.0
3.0
400
300
200
100
80
60
40
30
20
-0.8
-0.6
-0.4
-0.2
0
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20
-50 -100 -200 -500
-0.1
-0.2 -0.3 -0.5
-1.0
-2.0 -3.0 -5.0
-10
-20 -30
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20
-50 -100 -200 -500
-1.0 -2.0
-5.0 -10 -20
-50 -100 -200
-500 -1000
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
5.0 10 20
50 100
50 100 200
500 1.0k 2.0k
5.0k 10k 20k
50k
+0.5
0
±0.5
±1.0
±1.5
±2.0
±2.5
Ceb
VCE = -20V
TJ = 25
OC
TJ = 25
OC
N
F,
N
O
IS
E
FI
G
U
R
E
(d
B
)
C
,C
A
P
A
C
IT
A
N
C
E
(p
F)
V
,V
O
LT
A
G
E
(V
O
LT
S
)
C
O
E
FF
IC
IE
N
T
(m
V
/5
C
)
N
F,
N
O
IS
E
FI
G
U
R
E
(d
B
)
IC = - 1.0mA , RS=430
- 500
A , RS=560
- 50
A , RS=2.7k
- 100
A , RS=1.6k
Ccb
VBE(on) @ VCE = -10V
RθVC for VCE(sat)
RθVB for VBE
VCE(sat) @ IC/IB = 10
Figure 5.Frequency Effects
REVERSE VOLTAGE(VOLTS)
IC,COLLECTOR CURRENT(mA)
Figure 7.Capacitances
Figure 8.Currunt-Gain Bandwidth Product
f,FREQUENCY(KHz)
RS,SOURCE RESISTANCE(OHMS)
Figure 6.Source Resistance Effects
IC,COLLECTOR CURRENT(mA)
Figure 10.Temperature Coefficients
Figure 9."On" Voltages
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2907LT1 WAF | 制造商:ON Semiconductor 功能描述: |
| MMBT2907LTI | 制造商:ON Semiconductor 功能描述: |
| MMBT2907Q | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
| MMBT2907W | 制造商:SEMTECH_ELEC 制造商全稱:SEMTECH ELECTRONICS LTD. 功能描述:PNP Silicon Epitaxial Planar Medium Power Transistor |
| MMBT3404 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:SOT-23 Plastic-Encapsulate Transistors |
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