參數(shù)資料
型號: MMBT2907ARF
元件分類: 小信號晶體管
英文描述: 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù): 3/3頁
文件大?。?/td> 311K
代理商: MMBT2907ARF
MMBT2907A
350mW, PNP Small Signal Transistor
Small Signal Transistor
Rating and Characteristic Curves
Version :
A10
Typical Pulsed Current Gain
vs Collector Current
0.1
0.3
1
3
10
30
100
300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
T
YPI
CA
L
PU
LSED
C
URR
ENT
G
A
IN
C
FE
125 °C
25 °C
- 40 °C
V
= 5V
CE
Input and Output Capacitance
vs Reverse Bias Voltage
0.1
1
10
50
0
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
C
A
P
A
CI
T
A
NC
E
(
p
F
)
C ob
C ib
Collect or-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIE NT TEMP ERATURE ( C)
I
-
C
O
L
E
C
T
O
R
C
U
R
E
N
T
(n
A
)
A
CBO
°
V
= 35V
CB
Collector-Emitter Saturation
Voltage vs Collect or Current
110
100
500
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRE NT (mA)
V
-
C
O
LL
E
C
TO
R
E
M
IT
T
E
R
V
O
LT
A
G
E
(
V
)
C
CE
S
AT
β = 10
25 °C
- 40 °C
125 °C
Base-Emitter Saturation
Voltage vs Collector Current
110
100
500
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V
-B
A
S
E
M
IT
T
E
R
V
O
L
T
A
G
E
(V
)
C
BE
S
AT
25 °C
- 40 °C
125 °C
β = 10
Base Emitter ON Voltage vs
Collect or Current
0.1
1
10
25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V
-
B
A
S
E
M
IT
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
C
BE
(O
N)
V
= 5V
CE
25 °C
- 40 °C
125 °C
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