參數(shù)資料
型號(hào)： MMBT2907AL99Z
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 59K
代理商： MMBT2907AL99Z
PN2907A
/
MMBT2907A
/
MMPQ2907
/
NMT2907
/
PZT2907A
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
800
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
PZT2907A
B
C
SOT-223
E
PN2907A
C
B
E
TO-92
MMBT2907A
C
B
E
SOT-23
Mark: 2F
MMPQ2907
C
SOIC-16
E
B
E
B
E
B
E
B
NMT2907
SOT-6
Mark: .2B
C1
E1
C2
B1
E2
B2
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料
PDF描述
MMPQ2907L86Z 600 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
MMPQ3467/S62Z 1200 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
MMPQ3467/D84Z 1200 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
MMPQ3467/L99Z 1200 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
MMPQ3467 1200 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT2907AL-AE3-6-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP GENERAL PURPOSE AMPLIFIER
MMBT2907AL-AE3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP GENERAL PURPOSE AMPLIFIER
MMBT2907AL-AL3-6-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP GENERAL PURPOSE AMPLIFIER
MMBT2907AL-AL3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP GENERAL PURPOSE AMPLIFIER
MMBT2907ALT1 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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