- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95964 > MMBT2907A (VISHAY SEMICONDUCTORS) 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PDF資料下載
參數(shù)資料
| 型號(hào)： | MMBT2907A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 33K |
| 代理商： | MMBT2907A |
MMBT2907A
Vishay Semiconductors
formerly General Semiconductor
Document Number 88223
www.vishay.com
10-May-02
1
New Product
Small Signal Transistor (PNP)
.016 (0.4)
.056
(
1
.43
)
.037(0.95) .037(0.95)
ma
x
..004
(
0.1
)
.122 (3.1)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007
(
0
.17
5)
.0
45
(
1
.15)
.110 (2.8)
.052
(
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37
(
0
.95)
TO-236AB (SOT-23)
Features
PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
This transistor is also available in the TO-92 case
with the type designation MPS2907A.
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
–VCEO
60
V
Collector-Base Voltage
–VCBO
60
V
Emitter-Base Voltage
–VEBO
5.0
V
Collector Current
–IC
600
mA
Power Dissipation(1)
TA = 25°C
Ptot
225
mW
Derate above 25°C
1.8
mW/°C
Power Dissipation(2)
TA = 25°C
Ptot
300
mW
Derate above 25°C
2.4
mW/°C
Thermal Resistance
FR-5 Board
R
ΘJA
556
°C/W
Junction to Ambient Air
Alumina Substrate
417
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–55 to +150
°C
Notes:
(1) FR-5 Board = 1.0 x 0.75 x 0.062 in.
(2) Alumina Substrate = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 2F
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Pin Configuration
1 = Base
2 = Emitter
3 = Collector
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Mounting Pad Layout
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBT2907A/E8 | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT2907A/E9 | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT2907A | 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBT2907A | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBT2907A | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2907A MCC | 制造商:MCC 功能描述:General Purpose PNP SM TRANS SOT-23 制造商:MCC 功能描述:General Purpose PNP SM TRANS SOT-23 - free partial T/R at 500. |
| MMBT2907A | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP SOT-23 |
| MMBT2907A_08 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT2907A_09 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP GENERAL PURPOSE AMPLIFIER |
| MMBT2907A_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。