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參數(shù)資料
| 型號(hào)： | MMBT2907A/E9 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 33K |
| 代理商： | MMBT2907A/E9 |
MMBT2907A
Vishay Semiconductors
formerly General Semiconductor
Document Number 88223
www.vishay.com
10-May-02
1
New Product
Small Signal Transistor (PNP)
.016 (0.4)
.056
(
1
.43
)
.037(0.95) .037(0.95)
ma
x
..004
(
0.1
)
.122 (3.1)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007
(
0
.17
5)
.0
45
(
1
.15)
.110 (2.8)
.052
(
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37
(
0
.95)
TO-236AB (SOT-23)
Features
PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
This transistor is also available in the TO-92 case
with the type designation MPS2907A.
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
–VCEO
60
V
Collector-Base Voltage
–VCBO
60
V
Emitter-Base Voltage
–VEBO
5.0
V
Collector Current
–IC
600
mA
Power Dissipation(1)
TA = 25°C
Ptot
225
mW
Derate above 25°C
1.8
mW/°C
Power Dissipation(2)
TA = 25°C
Ptot
300
mW
Derate above 25°C
2.4
mW/°C
Thermal Resistance
FR-5 Board
R
ΘJA
556
°C/W
Junction to Ambient Air
Alumina Substrate
417
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–55 to +150
°C
Notes:
(1) FR-5 Board = 1.0 x 0.75 x 0.062 in.
(2) Alumina Substrate = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 2F
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Pin Configuration
1 = Base
2 = Emitter
3 = Collector
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Mounting Pad Layout
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2907A-G | 功能描述:射頻雙極電源晶體管 VCEO=60V IC=600mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MMBT2907AGH | 制造商:ZOWIE 制造商全稱:Zowie Technology Corporation 功能描述:General Purpose Transistor PNP Silicon |
| MMBT2907A-GS08 | 功能描述:兩極晶體管 - BJT PNP General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2907A-HF | 功能描述:射頻雙極電源晶體管 VCEO=60V IC=600mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MMBT2907AK | 功能描述:兩極晶體管 - BJT EPITAXIAL SILICON RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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