參數(shù)資料
型號(hào): MMBT2907A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: PNP General Purpose Amplifier
中文描述: 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SOT-23, 3 PIN
文件頁(yè)數(shù): 1/7頁(yè)
文件大小: 97K
代理商: MMBT2907A
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
60
60
5.0
800
V
V
V
mA
°
C
-55 to +150
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
PZT2907A
B
C
C
SOT-223
E
PN2907A
CBE
TO-92
MMBT2907A
C
B
E
SOT-23
Mark: 2F
1998 Fairchild Semiconductor Corporation
Thermal Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN2907A
625
5.0
83.3
200
*MMBT2907A
350
2.8
**PZT2907A
1,000
8.0
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
357
125
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
P
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