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參數(shù)資料
| 型號： | MMBT2222A |
| 廠商： | RECTRON LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 242K |
| 代理商： | MMBT2222A |
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Chatacteristic
Collector-Emitter Breakdown Voltage (IC= 10mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= 10mAdc, IE= 0)
Emitter-Base Breakdown Voltage (IE= 10mAdc, IC= 0)
Collector Cutoff Current (VCE= 60Vdc,VEB(off)= 3.0Vdc
Collector Cutoff Current (VCB= 60Vdc, IE= 0)
(VCB= 60Vdc, IE= 0, TA= 125
OC)
Emitter Cutoff Current (VEB= 3.0Vdc, IC= 0)
Base Cutoff Current (VCE= 60Vdc, VEB(off)= 3.0Vdc
DC Current Gain (IC= 10mAdc, VCE= 10Vdc, TA= -55
OC)
Collector-Emitter Saturation Voltage (1) (IC= 150mAdc, IB= 15mAdc)
(IC= 500mAdc, VCE= 10Vdc) (1)
V(BR)CEO
40
-
Vdc
V(BR)CBO
75
-
Vdc
V(BR)EBO
6.0
-
Vdc
ICEX
ICBO
IEBO
IBL
-
0.1
-
0.01
-
10
0.1
20
uAdc
Vdc
uAdc
nAdc
fT
300
-
MHz
hFE
35
-
40
-
VCE(sat)
-
0.3
-
1.0
uAdc
Symbol
Min
Max
Unit
(IC= 500mAdc, IB= 50mAdc)
Base-Emitter Saturation Voltage (1) (IC= 150mAdc, IB= 15mAdc)
Current-Gain-Bandwidth Product (2) (IC= 20mAdc, VCE= 20Vdc, f= 100MHz)
Cibo
-
25
pF
rb,Cc
td
tr
ts
tf
-
150
ps
NF
-
4.0
ns
dB
ns
hie
2.0
8.0
0.25
1.25
kW
hre
-
8.0
-
4.0
X 10-4
hfe
50
300
75
375
-
hoe
5.0
35
25
200
225
60
10
25
umhos
Input Capacitance (VEB=0.5Vdc, IC= 0, f= 1.0MHz)
Input Impedance (IC= 1.0mAdc, VCE=10Vdc, f=1.0kHz)
Voltage Feedback Ratio (IC= 1.0mAdc, VCE= 10Vdc, f= 1.0kHz)
Small-Signal Current Gain (IC= 1.0mAdc, VCE= 10Vdc, f= 1.0kHz)
Output Admittance (IC= 1.0mAdc, VCE= 10Vdc, f= 1.0kHz)
Collector Base Time Constant (IE= 20mAdc, VCB= 20Vdc, f= 31.8MHz)
Noise Figure (IC= 100mAdc, VCE= 10Vdc, RS= 1.0kW, f= 1.0kHz)
(VCC= 30Vdc, VBE(off)= -0.5Vdc, IC= 150mAdc, IB1= 15mAdc)
(VCC= 30Vdc, IC= 150mAdc, IB1= IB2= 15mAdc)
(IC= 10mAdc, VCE=10Vdc, f=1.0kHz)
(IC= 10mAdc, VCE=10Vdc, f= 1.0kHz)
(IC= 10mAdc, VCE= 10Vdc, f= 1.0kHz)
Vdc
VBE(sat)
0.6
1.2
-
2.0
(IC= 500mAdc, IB= 50mAdc)
Delay Time
Rise Time
Storage Time
Fall Time
NOTES : 1. Pulse Test: Pulse Width<300ms,Duty Cycle<2.0%
2. fT is defined as the frequency at which |hfe| extrapolates to unity
-
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2222A MCC | 制造商:MCC 功能描述:General Purpose NPN SM TRANS SOT-23 制造商:MCC 功能描述:General Purpose NPN SM TRANS SOT-23 - free partial T/R at 500. |
| MMBT2222A,215 | 功能描述:兩極晶體管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222A | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR NPN SOT-23 |
| MMBT2222A/E8 | 制造商:Vishay Intertechnologies 功能描述:TRANSISTOR,BJT,NPN,40V V(BR)CEO,600MA I(C),TO-236AB |
| MMBT2222A_05 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:NPN GENERAL PURPOSE SWITCHING TRANSISTOR |
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