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參數資料
| 型號： | MMBT2222A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 2/3頁 |
| 文件大小： | 34K |
| 代理商： | MMBT2222A |
MMBT2222A
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88222
2
10-May-02
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VCE = 10 V, IC = 0.1 mA
35
——
VCE = 10 V, IC = 1 mA
50
——
VCE = 10 V, IC = 10 mA
75
——
DC Current Gain
hFE
VCE = 10 V, IC = 10 mA
35
———
TA = -55°C
VCE = 10 V, IC = 150 mA
(1)
100
—
300
VCE = 10 V, IC = 500 mA
(1)
40
——
VCE = 1.0 V, IC = 150 mA
(1)
50
——
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 10
A, IE = 0
75
——
V
Collector-Emitter Breakdown Voltage(1)
V(BR)CEO
IC = 10 mA, IB = 0
40
——
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IC = 10
A, IC = 0
6.0
——
V
Collector-Emitter Saturation Voltage(1)
VCEsat
IC = 150 mA, IB = 15 mA
——
0.3
V
IC = 500 mA, IB = 50 mA
——
1.0
Base-Emitter Saturation Voltage(1)
VBEsat
IC = 150 mA, IB = 15 mA
0.6
—
1.2
V
IC = 500 mA, IB = 50 mA
——
2.0
Collector Cut-off Current
ICEX
VEB = 3 V, VCE = 60 V
——
10
nA
VCB = 60 V, IE = 0
——
10
nA
Collector Cut-off Current
ICBO
VCB = 50 V, IE = 0 V
——
10
A
TA = 125°C
Base Cut-off Current
IBL
VEB = 3 V, VCE = 60 V
——
20
nA
Emitter Cut-off Current
IEBO
VEB = 3 VDC, IC = 0
——
100
nA
Current Gain-Bandwidth Product
fT
VCE = 20 V, IC = 20 mA
300
——
MHz
f = 100 MHz
Output Capacitance
Cobo
VCB = 10 V, f = 1 MHz, IE = 0
——
8pF
Input Capacitance
Cibo
VEB = 0.5 V, f = 1 MHz, IC = 0
——
25
pF
Noise Figure
NF
VCE =10 V, IC = 100
A,
——
4.0
dB
RS =1 k
, f = 1 kHz
VCE = 10 V, IC = 1 mA
2
—
8.0
Input Impedance
hie
f = 1 kHz
k
VCE = 10 V, IC = 10 mA
0.25
—
1.25
f = 1 kHz
VCE = 10 V, IC = 1 mA,
50
—
300
Small Signal Current Gain
hfe
f = 1 kHz
—
VCE = 10 V, IC = 10 mA,
75
—
375
f = 1 kHz
Voltage Feedback Ratio
hre
VCE = 10 V, IC = 1 mA,
50
—
300
—
f = 1 kHz
75
—
375
VCE = 10 V, IC = 1 mA,
5.0
—
35
Output Admittance
hoe
f = 1 kHz
S
VCE = 10 V, IC = 10 mA,
25
—
200
f = 1 kHz
Note:
(1) Pulse Test: Pulse width
≤ 300 s - Duty cycle ≤ 2%
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT2222A MCC | 制造商:MCC 功能描述:General Purpose NPN SM TRANS SOT-23 制造商:MCC 功能描述:General Purpose NPN SM TRANS SOT-23 - free partial T/R at 500. |
| MMBT2222A,215 | 功能描述:兩極晶體管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222A | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR NPN SOT-23 |
| MMBT2222A/E8 | 制造商:Vishay Intertechnologies 功能描述:TRANSISTOR,BJT,NPN,40V V(BR)CEO,600MA I(C),TO-236AB |
| MMBT2222A_05 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:NPN GENERAL PURPOSE SWITCHING TRANSISTOR |
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