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參數(shù)資料
| 型號： | MMBR5031LT1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 97K |
| 代理商： | MMBR5031LT1 |
1
MMBR5031LT1
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
High-Frequency Transistor
Designed for thick and thin–film circuits using surface mount components
and requiring low–noise, high–gain signal amplification at frequencies to 1.0
GHz.
High Gain — Gpe = 17 dB Typ @ f = 450 MHz
Low Noise — NF = 2.5 dB Typ @ f = 450 MHz
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
10
Vdc
Collector–Base Voltage
VCBO
15
Vdc
Emitter–Base Voltage
VEBO
3.0
Vdc
Collector Current — Continuous
IC
20
mAdc
Maximum Junction Temperature
TJmax
150
°C
Power Dissipation, Tcase = 75°C (1)
Derate linearly above Tcase = 75°C @
PD(max)
0.300
4.00
W
mW/
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Storage Temperature
Tstg
– 55 to +150
°C
Thermal Resistance Junction to Case
R
θJC
250
°C/W
DEVICE MARKING
MMBR5031LT1 = 7G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
10
—
Vdc
Collector–Base Breakdown Voltage (IC = 0.01 mAdc, IE = 0)
V(BR)CBO
15
—
Vdc
Emitter–Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0)
V(BR)EBO
3.0
—
Vdc
Collector Cutoff Current (VCB = 6.0 Vdc, IE = 0)
ICBO
—
10
nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 6.0 Vdc)
hFE
25
—
300
—
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz)
fT
—
1,000
—
MHz
Collector–Base Capacitance
(VCE = 6.0 Vdc, IE = 0, f = 0.1 MHz)
Ccb
—
1.5
pF
Minimum Noise Figure (IC = 1.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz)
NFmin
—
2.5
—
dB
Common–Emitter Amplifier Power Gain
(IC = 1.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz)
Gpe
—
17
25
dB
NOTE:
1.Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MMBR5031LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBR5031LT1
RF AMPLIFIER
TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
Motorola, Inc. 1995
REV 7
ARCHIVE
INFORMA
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ARCHIVE
INFORMA
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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| MMBR571LT1 | 制造商:Freescale Semiconductor 功能描述: |
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