- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95962 > MMBR5179LT1 (FREESCALE SEMICONDUCTOR INC) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB PDF資料下載
參數(shù)資料
| 型號： | MMBR5179LT1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 97K |
| 代理商： | MMBR5179LT1 |
1
MMBR5179LT1
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
High-Frequency Transistor
Designed for small–signal amplification at frequencies to 500 MHz.
Specifically packaged for use in thick and thin–film circuits using surface mount
components.
High Gain — Gpe = 15 dB Typ @ f = 200 MHz
Low Noise — NF = 4.5 dB Typ @ f = 200 MHz
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
15
Vdc
Collector–Base Voltage
VCBO
30
Vdc
Emitter–Base Voltage
VEBO
3.0
Vdc
Collector Current — Continuous
IC
50
mAdc
Maximum Junction Temperature
TJmax
150
°C
Power Dissipation, Tcase = 75°C (1)
Derate linearly above Tcase = 75°C @
PD(max)
0.375
5.00
W
mW/
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Storage Temperature
Tstg
– 55 to +150
°C
Thermal Resistance Junction to Case
R
θJC
200
°C/W
DEVICE MARKING
MMBR5179LT1 = 7H
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0)
V(BR)CEO
15
—
Vdc
Collector–Base Breakdown Voltage (IC = 0.001 mAdc, IE = 0)
V(BR)CBO
30
—
Vdc
Emitter–Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0)
V(BR)EBO
3.0
—
Vdc
Collector Cutoff Current (VCB = 15 Vdc, IE = 0)
ICBO
—
0.02
Adc
ON CHARACTERISTICS
DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc)
hFE
30
—
250
—
Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
—
0.4
Vdc
Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc)
VBE(sat)
—
1.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz)
fT
—
1,400
—
MHz
Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz)
Ccb
—
1.0
pF
50 ohm Noise Figure (IC = 1.5 mAdc, VCE = 6.0 Vdc, RS = 50 ,
f = 200 MHz)
NF
—
4.5
—
dB
Common–Emitter Amplifier Power Gain
(VCE = 6.0 Vdc, IC = 5.0 mAdc, f = 200 MHz)
Gpe
—
15
—
dB
NOTE:
1.Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MMBR5179LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBR5179LT1
RF AMPLIFIER
TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
Motorola, Inc. 1997
REV 8
ARCHIVE
INFORMA
TION
ARCHIVE
INFORMA
TION
F
re
e
sc
a
le
S
e
m
ic
o
n
d
u
c
to
r,
I
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
c
..
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBR5179 | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MMBR571LT1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF5711LT1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MMBR571MLT1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MMBR901MLT1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBR521LT1 | 制造商:Motorola Inc 功能描述: |
| MMBR571 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon High Frequency Transisters |
| MMBR571LT1 | 制造商:Freescale Semiconductor 功能描述: |
| MMBR901LT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor |
| MMBR901LT3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。