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參數(shù)資料
| 型號(hào)： | MMBFU310LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | JFET Transistor N-Channel |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | MMBFU310LT1G |
MMBFU310LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
GateSource Breakdown Voltage (I
G
= 1.0 Adc, V
DS
= 0)
V
(BR)GSS
25
Vdc
Gate 1 Leakage Current (V
GS
= 15 Vdc, V
DS
= 0)
I
G1SS
150
pA
Gate 2 Leakage Current (V
GS
= 15 Vdc, V
= 0, T
A
= 125
°
C)
I
G2SS
150
nAdc
Gate Source Cutoff Voltage (V
DS
= 10 Vdc, I
D
= 1.0 nAdc)
V
GS(off)
2.5
6.0
Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current (V
DS
= 10 Vdc, V
GS
= 0)
I
DSS
24
60
mAdc
GateSource Forward Voltage (I
G
= 10 mAdc, V
DS
= 0)
V
GS(f)
1.0
Vdc
SMALLSIGNAL CHARACTERISTICS
Forward Transfer Admittance (V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz)
|Y
fs
|
10
18
mmhos
Output Admittance (V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz)
|y
os
|
250
mhos
Input Capacitance (V
GS
= 10 Vdc, V
DS
= 0 Vdc, f = 1.0 MHz)
C
iss
5.0
pF
Reverse Transfer Capacitance (V
GS
= 10 Vdc, V
DS
= 0 Vdc, f = 1.0 MHz)
C
rss
2.5
pF
70
60
50
40
30
20
5.0
4.0
I
D
V
GS
, GATESOURCE VOLTAGE (VOLTS)
I
DSS
V
GS
, GATESOURCE CUTOFF VOLTAGE (VOLTS)
Figure 1. Drain Current and Transfer
Characteristics vs GateSource Voltage
3.0
2.0
1.0
0
10
0
70
60
50
40
30
20
10
,
ID
V
DS
= 10 V
I
DSS
+25
°
C
T
A
= 55
°
C
+25
°
C
+25
°
C
55
°
C
+150
°
C
+150
°
C
,
ID
V
GS
, GATESOURCE VOLTAGE (VOLTS)
5.0
4.0
3.0
2.0
1.0
0
35
30
25
20
15
10
5.0
0
,
Yf
Figure 2. Forward Transconductance
vs GateSource Voltage
V
DS
= 10 V
f = 1.0 MHz
T
A
= 55
°
C
+25
°
C
+150
°
C
+25
°
C
55
°
C
+150
°
C
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