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參數(shù)資料
| 型號： | MMBFJ201S62Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 182K |
| 代理商： | MMBFJ201S62Z |
J201
/
J202
/
MMBFJ201
/
MMBFJ202
Discrete POWER & Signal
Technologies
J201
J202
This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources. Sourced
from Process 52.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
MMBFJ201
MMBFJ202
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
TA = 25°C unless otherwise noted
N-Channel General Purpose Amplifier
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
40
V
VGS
Gate-Source Voltage
- 40
V
IGF
Forward Gate Current
50
mA
TJ ,Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
J201 / J202
*MMBFJ201
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
SOT-23
Mark: 62P / 62Q
G
S
D
G
S
D
TO-92
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
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| MMBFJ210_Q | 功能描述:JFET N-Channel JFET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
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