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參數(shù)資料
| 型號(hào)： | MMBFJ212D87Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 199K |
| 代理商： | MMBFJ212D87Z |
5
G
D
S
J210
J211
J212
N-Channel RF Amplifier
This device is designed for HF/VHF mixer/amplifier and
applications where Process 50 is not adequate. Sufficient
gain and low noise for sensitive receivers. Sourced from
Process 90.
MMBFJ210
MMBFJ211
MMBFJ212
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25°C unless otherwise noted
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
25
V
VGS
Gate-Source Voltage
- 25
V
IGF
Forward Gate Current
10
mA
TJ ,Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
J210-212
*MMBFJ210-212
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
225
1.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
556
°C/W
SOT-23
Mark: 62V / 62W / 62X
G
S
D
TO-92
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NOTE: Source & Drain
are interchangeable
J210
/
J21
1
/
J212
/
MMBFJ210
/
MMBFJ21
1
/
MMBFJ212
J210/J211/J212/MMBFJ210/J211/J212, Rev A
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