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參數(shù)資料
| 型號(hào)： | MMBF5484LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | JFET Transistor N(N溝道JFET晶體管) |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 148K |
| 代理商： | MMBF5484LT1 |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 3
1
Publication Order Number:
MMBF5484LT1/D
MMBF5484LT1
Preferred Device
JFET Transistor
NChannel
Features
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainGate Voltage
V
DG
25
Vdc
Reverse GateSource Voltage
V
GS(r)
25
Vdc
Forward Gate Current
I
G(f)
10
mAdc
Continuous Device Dissipation at or Below
T
= 25
°
C
Linear Derating Factor
P
D
200
2.8
mW
mW/
°
C
Storage Channel Temperature Range
T
stg
65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board,
(Note 1) T
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
556
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
SOT23 (TO236)
CASE 318
STYLE 10
Device
Package
Shipping
ORDERING INFORMATION
MMBF5484LT1
SOT23
3,000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBF5484LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
1
2
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
M6B M
M6B = Device Code
M
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
2 SOURCE
3
GATE
1 DRAIN
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBF5484LT1_06 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:JFET Transistor N−Channel |
| MMBF5484LT1G | 功能描述:JFET 25V 10mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF5484LT1G | 制造商:ON Semiconductor 功能描述:TRANSISTOR JFET N-CHANNEL 3MA I(DSS) |
| MMBF5485 | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| MMBF5485_Q | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
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