參數(shù)資料
型號: MMBF5458L99Z
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: N-CHANNEL, Si, SMALL SIGNAL, JFET
文件頁數(shù): 1/4頁
文件大?。?/td> 100K
代理商: MMBF5458L99Z
2N5457
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2N5458
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2N5459
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MMBF5457
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MMBF5458
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MMBF5459
Discrete POWER & Signal
Technologies
2N5457
2N5458
2N5459
MMBF5457
MMBF5458
MMBF5459
N-Channel General Purpose Amplifier
This device is a low level audio amplifier and switching transistors,
and can be used for analog switching applications. Sourced from
Process 55.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
25
V
VGS
Gate-Source Voltage
- 25
V
IGF
Forward Gate Current
10
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25°C unless otherwise noted
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Characteristic
Max
Units
2N5457
*MMBF5457
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
G
S
D
TO-92
SOT-23
Mark: 6D / 61S / 6L
G
S
D
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
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