參數(shù)資料
型號(hào)： MMBF5460LT3
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
封裝： CASE 318-08, 3 PIN
文件頁數(shù)： 1/3頁
文件大小： 151K
代理商： MMBF5460LT3
JFET - General Purpose
Transistor
P–Channel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Gate Voltage
VDG
40
Vdc
Reverse Gate–Source Voltage
VGSR
40
Vdc
Forward Gate Current
IGF
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Junction and Storage Temperature
TJ, Tstg
–55 to +150
°C
DEVICE MARKING
MMBF5460LT1 = 6E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = 10 Adc, VDS = 0)
V(BR)GSS
40
—
Vdc
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100°C)
IGSS
—
5.0
1.0
nAdc
Adc
Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 Adc)
VGS(off)
0.75
—
6.0
Vdc
Gate Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc)
VGS
0.5
—
4.0
Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (VDS = 15 Vdc, VGS = 0)
IDSS
–1.0
—
–5.0
mAdc
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|Yfs|
1000
—
4000
mhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|yos|
—
75
mhos
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
5.0
7.0
pF
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
1.0
2.0
pF
1. FR–5 = 1.0
0.75 0.062 in.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
521
Publication Order Number:
MMBF5460LT1/D
MMBF5460LT1
1
2
3
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
2 SOURCE
3
GATE
1 DRAIN
相關(guān)PDF資料
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參數(shù)描述
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MMBF5462_Q 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
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