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參數資料
| 型號： | MMBF5457LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數： | 2/3頁 |
| 文件大小： | 137K |
| 代理商： | MMBF5457LT3 |
MMBF5457LT1
http://onsemi.com
519
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance(2)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|Yfs|
1000
–
5000
mhos
Reverse Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|yrs|
–
10
50
mhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
–
4.5
7.0
pF
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
–
1.5
3.0
pF
2. Pulse Test: Pulse Width
≤ 630 ms, Duty Cycle ≤ 10%.
TYPICAL CHARACTERISTICS
RS, SOURCE RESISTANCE (Megohms)
Figure 1. Noise Figure versus Source
Resistance
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 2. Typical Drain Characteristics
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 3. Common Source Transfer
Characteristics
14
1.0
0.4
0.2
0
12
10
8
6
4
2
-1.2
0.8
0.6
0
5
10
15
20
25
0
0.6
0.4
0.2
0.8
1.2
1.0
-0.8
-0.4
0
1.2
0
,DRAIN
CURRENT
(mA)
DI
,DRAIN
CURRENT
(mA)
DI
NF
,NOISE
FIGURE
(dB)
0.001
0.01
0.1
1.0
10
VDS = 15 V
VGS = 0
f = 1 kHz
VDS = 15 V
VGS = 0 V
-0.2 V
-0.4 V
-0.6 V
-0.8 V
-1.0 V
VGS(off) ^ -1.2 V
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| MMBF5460 | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
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