參數(shù)資料
型號: MMBF5457LT3
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
封裝: CASE 318-08, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 137K
代理商: MMBF5457LT3
JFET - General Purpose
Transistor
N–Channel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS
25
Vdc
Drain–Gate Voltage
VDG
25
Vdc
Reverse Gate–Source Voltage
VGS(r)
25
Vdc
Gate Current
IG
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Junction and Storage Temperature
TJ, Tstg
–55 to +150
°C
DEVICE MARKING
MMBF5457LT1 = 6D
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 10 Adc, VDS = 0)
V(BR)GSS
25
Vdc
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
IGSS
1.0
200
nAdc
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
VGS(off)
0.5
–6.0
Vdc
Gate Source Voltage
(VDS = 15 Vdc, ID = 100 Adc)
VGS
–2.5
Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(2)
(VDS = 15 Vdc, VGS = 0)
IDSS
1.0
5.0
mAdc
1. FR–5 = 1.0
0.75 0.062 in.
2. Pulse Test: Pulse Width
≤ 630 ms, Duty Cycle ≤ 10%.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
518
Publication Order Number:
MMBF5457LT1/D
MMBF5457LT1
1
2
3
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
2 SOURCE
3
GATE
1 DRAIN
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