參數資料
型號: MMBF4391LT3
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
封裝: CASE 318-08, 3 PIN
文件頁數: 4/4頁
文件大?。?/td> 0K
代理商: MMBF4391LT3
MMBF4391LT1 MMBF4392LT1 MMBF4393LT1
http://onsemi.com
512
Figure 10. Effect of IDSS on Drain–Source
Resistance and Gate–Source Voltage
IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA)
,DRAIN-SOURCE
ON-ST
AT
E
DS(on)r
20
10
30
40
50
30 40 50 60 70
20
RESIST
ANCE
(OHMS)
0
10
0
1.0
2.0
3.0
4.0
5.0
,GA
TE-SOURCE
VOL
TAGE
GS
V
(VOL
TS)
Tchannel = 25°C
VGS(off)
rDS(on) @ VGS = 0
6.0
7.0
8.0
9.0
10
70
60
80
90
100
80 90 100 110 120 130 140 150
NOTE 2
The Zero–Gate–Voltage Drain Current (IDSS) is the principle
determinant of other J–FET characteristics. Figure 10 shows
the relationship of Gate–Source Off Voltage (VGS(off)) and
Drain–Source On Resistance (rDS(on)) to IDSS. Most of the de-
vices will be within
±10% of the values shown in Figure 10.
This data will be useful in predicting the characteristic varia-
tions for a given part number.
For example:
Unknown
rDS(on) and VGS range for an MMBF4392
The electrical characteristics table indicates that an
MMBF4392 has an IDSS range of 25 to 75 mA. Figure 10
shows rDS(on) = 52 Ohms for IDSS = 25 mA and 30 Ohms for
IDSS = 75 mA. The corresponding VGS values are 2.2 volts and
4.8 volts.
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相關代理商/技術參數
參數描述
MMBF4392 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel
MMBF4392_Q 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel
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MMBF4392L 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:JFET Switching Transistors
MMBF4392LT1 功能描述:JFET 30V 10mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel