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參數(shù)資料
| 型號(hào)： | MMBF170-13 |
| 廠商： | DIODES INC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 0K |
| 代理商： | MMBF170-13 |
DS30104 Rev. 6 - 2
1 of 3
MMBF170
www.diodes.com
Diodes Incorporated
MMBF170
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Available in Lead Free/RoHS Compliant Version (Note 2)
Maximum Ratings
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
MMBF170
Units
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage RGS
1.0MW
VDGR
60
V
Gate-Source Voltage
Continuous
Pulsed
VGSS
±20
±40
V
Drain Current (Note 1)
Continuous
Pulsed
ID
500
800
mA
Total Power Dissipation (Note 1)
Pd
300
1.80
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
417
K/W
Operating and Storage Temperature Range
Tj,TSTG
-55 to +150
°C
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 6, on Page 2.
Marking: (See Page 2) K6Z
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
Mechanical Data
A
E
J
L
TOP VIEW
M
B C
H
G
D
K
D
G
S
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
Note:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
Source
Gate
Drain
SPICE MODELS: MMBF170
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