參數(shù)資料
型號(hào)： MMBD914
廠商： INFINEON TECHNOLOGIES AG
英文描述： Silicon Switching Diode
中文描述： 硅開關(guān)二極管
文件頁數(shù)： 1/2頁
文件大?。?/td> 80K
代理商： MMBD914
MMBD914
350mW 100 Volt
Silicon Epitaxial Diode
SOT-23
Suggested Solder
Pad Layout
Features
Low Current Leakage
Low Cost
Small Outline Surface Mount Package
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Maximum Ratings
Operating Temperature: -55
°
C to +150
°
C
Storage Temperature: -55
°
C to +150
°
C
Maximum Thermal Resistance; 357K/W Junction To Ambient
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Reverse Voltage
V
R
Peak Reverse
Voltage
Average Rectified
Current
Power Dissipation
P
TOT
Junction
Temperature
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Reverse Recovery
Time
75V
100V
V
RM
I
O
150mA
Resistive Load
f > 50Hz
350mW
175
°
C
T
J
I
FSM
1.0A
t=1s,
Non-Repetitive
V
F
.855V
I
FM
= 10mA;
T
J
= 25
°
C*
I
R
25nA
T
J
= 25
°
C
V
R
=20Volts
C
J
2pF
Measured at
1.0MHz, V
R
=0V
I
F
=10mA
V
R
= 6V
R
L
=100
T
rr
4nS
*Pulse test: Pulse width 300
μ
sec, Duty cycle 2%
.079
2.000
imm
.031
.800
.035
.900
.037
.950
.037
.950
A
B
C
D
E
F
G
H
J
5 D
C
A
Pin Configuration
Top View
www.
mc c semi
.c om
omp
onents
21201 Itasca Street Chatsworth
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相關(guān)PDF資料
PDF描述
MMBD914LT1 High-Speed Switching Diode
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MMBD914LT1 High-Speed Switching Diode
MMBD914 SURFACE MOUNT SWITCHING DIODE
MMBD914 SURFACE MOUNT SWITCHING DIODES
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