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參數(shù)資料
| 型號： | MMBD914LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | High-Speed Switching Diode |
| 中文描述： | 高速開關(guān)二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 80K |
| 代理商： | MMBD914LT1 |
MMBD914
350mW 100 Volt
Silicon Epitaxial Diode
SOT-23
Suggested Solder
Pad Layout
Features
Low Current Leakage
Low Cost
Small Outline Surface Mount Package
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Maximum Ratings
Operating Temperature: -55
°
C to +150
°
C
Storage Temperature: -55
°
C to +150
°
C
Maximum Thermal Resistance; 357K/W Junction To Ambient
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Reverse Voltage
V
R
Peak Reverse
Voltage
Average Rectified
Current
Power Dissipation
P
TOT
Junction
Temperature
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Reverse Recovery
Time
75V
100V
V
RM
I
O
150mA
Resistive Load
f > 50Hz
350mW
175
°
C
T
J
I
FSM
1.0A
t=1s,
Non-Repetitive
V
F
.855V
I
FM
= 10mA;
T
J
= 25
°
C*
I
R
25nA
T
J
= 25
°
C
V
R
=20Volts
C
J
2pF
Measured at
1.0MHz, V
R
=0V
I
F
=10mA
V
R
= 6V
R
L
=100
T
rr
4nS
*Pulse test: Pulse width 300
μ
sec, Duty cycle 2%
.079
2.000
imm
.031
.800
.035
.900
.037
.950
.037
.950
A
B
C
D
E
F
G
H
J
5 D
C
A
Pin Configuration
Top View
www.
mc c semi
.c om
omp
onents
21201 Itasca Street Chatsworth
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBD914 | SURFACE MOUNT SWITCHING DIODE |
| MMBD914 | SURFACE MOUNT SWITCHING DIODES |
| MMBD914B | SURFACE MOUNT SWITCHING DIODES |
| MMBD914 | HIGH-SPEED SWITCHING DIODE |
| MMBD914 | SMALL SIGNAL SWITCHING DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBD914LT1G | 功能描述:二極管 - 通用，功率，開關(guān) 100V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MMBD914LT1G | 制造商:ON Semiconductor 功能描述:Small Signal Diode |
| MMBD914LT1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High-Speed Switching Diode |
| MMBD914LT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| MMBD914LT1HTSA1 | 制造商:Infineon Technologies AG 功能描述:Diode Switching 100V 0.25A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF DIODES - Tape and Reel 制造商:Infineon Technologies AG 功能描述:DIODE SWITCH 100V 0.25A SOT23-3 |
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